DTMOS mode as an effective solution of RTN suppression for robust device/circuit co-design

Author

Shaofeng Guo ; Ru Huang ; Peng Hao ; Mulong Luo ; Pengpeng Ren ; Jianping Wang ; Weihai Bu ; Jingang Wu ; Waisum Wong ; Yu, Scott ; Hanming Wu ; Shiuh-Wuu Lee ; Runsheng Wang ; Yangyuan Wang

Author_Institution

Key Lab. of Microelectron. Devices & Circuits (MOE), Peking Univ., Beijing, China

fYear

2014

Abstract

In this paper, using DTMOS as an effective solution of RTN suppression without device/circuit performance penalty is proposed and demonstrated for the first time, with experimental verification and circuit analysis. The experiments show that RTN amplitude is greatly reduced in DTMOS mode, which is even better than the body-biasing technique of FBB, due to the efficient dynamic modulation mechanism. Circuit stability and performance degradation induced by RTN are much improved in the design using DTMOS. New characteristics of RTN physics in DTMOS are also observed and studied in detail. The results are helpful to the robust and reliable device/circuit co-design in future nano-CMOS technology.

Keywords

CMOS integrated circuits; circuit stability; integrated circuit design; network analysis; random noise; DTMOS mode; RTN amplitude; RTN suppression; circuit analysis; circuit stability; dynamic modulation mechanism; dynamic threshold MOS mode; nanoCMOS technology; random telegraph noise; robust device-circuit co-design; Degradation; Equations; Logic gates; MOS devices; Performance evaluation; Robustness; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047040

Filename

7047040