• DocumentCode
    3565119
  • Title

    A Schottky-barrier silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 decades of current

  • Author

    Jian Zhang ; De Marchi, Michele ; Gaillardon, Pierre-Emmanuel ; De Micheli, Giovanni

  • Author_Institution
    Integrated Syst. Lab., EPFL, Lausanne, Switzerland
  • fYear
    2014
  • Abstract
    In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA/μm is also achieved with high Ion/Ioff ratio of 107.
  • Keywords
    MOSFET; Schottky barriers; silicon; FinFET; SS; Schottky barrier source-drain; Si; current swing; steep subthreshold slope; ultralow leakage floor; FinFETs; Impact ionization; Logic gates; Schottky barriers; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047045
  • Filename
    7047045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565119