• DocumentCode
    3565122
  • Title

    Progressive vs. abrupt reset behavior in conductive bridging devices: A C-AFM tomography study

  • Author

    Celano, U. ; Goux, L. ; Belmonte, A. ; Giammaria, G. ; Opsomer, K. ; Detavernier, C. ; Richard, O. ; Bender, H. ; Irrera, F. ; Jurczak, M. ; Vandervorst, W.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2014
  • Abstract
    We investigated the physical origin of progressive and abrupt reset in conductive bridging memories. The conductive filaments for both types of reset are observed in 3D using C-AFM tomography, enabling the observation of broken and non-broken filaments respectively for abrupt and progressive reset.
  • Keywords
    atomic force microscopy; random-access storage; C-AFM tomography; CBRAM; abrupt reset behavior; broken filament; conductive bridging device; conductive filament; nonbroken filament; progressive reset behavior; Aluminum oxide; Electrodes; Materials; Switches; Three-dimensional displays; Tomography; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047048
  • Filename
    7047048