• DocumentCode
    3565123
  • Title

    Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells

  • Author

    Chen, C.Y. ; Goux, L. ; Fantini, A. ; Redolfi, A. ; Clima, S. ; Degraeve, R. ; Chen, Y.Y. ; Groeseneken, G. ; Jurczak, M.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2014
  • Abstract
    We demonstrate the strong impact of reset amplitude and duration on the endurance degradation of scaled TiNTa2O5Ta cells, which from ab-initio and electrical switching simulation is attributed to O interaction with TiN. Clear improvements are obtained using (i) shorter write pulses, (ii) low O-affinity Ru bottom electrode, and or (iii) higher O-affinity HfO2 dielectric.
  • Keywords
    hafnium compounds; resistive RAM; semiconductor device reliability; tantalum compounds; titanium compounds; HfO2; TiN-Ta2O5-Ta; electrical switching simulation; electrode materials; programming pulses; scaled RRAM cells; Degradation; Electrodes; Materials; Standards; Switches; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047049
  • Filename
    7047049
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565123