DocumentCode
3565130
Title
Large-scale fabrication of graphene-based electronic and MEMS devices
Author
Debin Wang ; He Tian ; Martin-Fernandez, I?±igo ; Yi Yang ; Tian-Ling Ren ; Yuegang Zhang
Author_Institution
Lawrence Berkeley Nat. Lab., Berkeley, CA, USA
fYear
2014
Abstract
Graphene has been demonstrated great potential in electronic and optoelectronic applications. However, the zero band gap of graphene leads to the low on/off ratio in field effect transistors (FETs) and low optical wavelength selectivity in photo detectors. Moreover, the commonly used wet-transfer process for chemical vapor deposited (CVD) graphene could introduce contamination and defects that degrade the graphene device´s performance. These problems could be resolved if we could find a graphene ribbon fabrication method that could precisely control the width, edge structure, as well as registries (location, orientation) on the substrates. Here, we will showcase recent works on novel transfer-free and contaminant-free CVD methods for direct-growth of graphene nanoribbons and microribbons on dielectric substrates.
Keywords
chemical vapour deposition; field effect transistors; graphene devices; micromechanical devices; photodetectors; C; CVD graphene; FET; MEMS devices; chemical vapor deposited graphene; contaminant-free CVD methods; dielectric substrates; field effect transistors; graphene microribbons; graphene nanoribbons; graphene ribbon; graphene-based electronic; large scale fabrication; low optical wavelength selectivity; photodetectors; transfer-free CVD methods; wet transfer process; zero band gap; Fabrication; Films; Graphene; Nickel; Photodetectors; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047056
Filename
7047056
Link To Document