DocumentCode
3565144
Title
Impacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs
Author
Sun, X. ; Zhang, Y. ; Chang-Liao, K.S. ; Palacios, T. ; Ma, T.P.
Author_Institution
Yale Univ., New Haven, CT, USA
fYear
2014
Abstract
The impact of fluorine treatment on AlGaN/GaN MOS-HEMTs has been investigated. Fluorine was found to suppress pre-existing traps in MOS-HEMT, which improves the off-state at high temperatures. Fluorine doping and associated etching, however, also generates slow border traps and fast interface states that degrade the MOS-HEMT performance. Multi-faceted mechanisms for drain current degradation due to F-doping and gate-recess-etch have been investigated in enhancement-mode MOS-HEMTs.
Keywords
III-V semiconductors; MIS devices; etching; fluorine; high electron mobility transistors; semiconductor doping; wide band gap semiconductors; AlGaN-GaN; MOS-HEMT; drain current degradation; etching; fluorine doping; fluorine treatment; multi-faceted mechanisms; Aluminum gallium nitride; Aluminum oxide; Degradation; Gallium nitride; HEMTs; Logic gates; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047070
Filename
7047070
Link To Document