DocumentCode
3565159
Title
Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs
Author
Conrad, N. ; Si, M. ; Shin, S.H. ; Gu, J.J. ; Zhang, J. ; Alam, M.A. ; Ye, P.D.
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2014
Abstract
In this work, we report the first observation of RTN in highly scaled InGaAs GAA MOSFETs fabricated by a top-down approach. RTN and low frequency noise were systematically studied for devices with various gate dielectrics, channel lengths and nanowire diameters. Mobility fluctuation is confirmed to be the source of low-frequency noise, showing 1/f characteristics. Low-frequency noise was found to decrease as the channel length scaled down from 80 nm to 20 nm, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET.
Keywords
1/f noise; III-V semiconductors; MOSFET; arsenic alloys; gallium alloys; gallium arsenide; indium alloys; nanowires; 1/f characteristic; InGaAs; RTN; channel length; gate dielectric; gate-all-around; low-frequency noise; metal oxide semiconductor field effect transistor; mobility fluctuation; near-ballistic III-V GAA nanowire MOSFET; random telegraph noise; top-down approach; Aluminum oxide; Fluctuations; Indium gallium arsenide; Logic gates; Low-frequency noise; MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047086
Filename
7047086
Link To Document