RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corresponding area-scaling as their Si counterparts, a larger stochastic impact of single defects on the device characteristic is found to induce larger aging-related variance. We ascribe this to a more percolative channel conduction induced by still excessive interface and channel defectivity.