Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm

Author

Ikeda, S. ; Sato, H. ; Honjo, H. ; Enobio, E.C.I. ; Ishikawa, S. ; Yamanouchi, M. ; Fukami, S. ; Kanai, S. ; Matsukura, F. ; Endoh, T. ; Ohno, H.

Author_Institution

Center for Innovative Integrated Electron. Syst., Tohoku Univ., Sendai, Japan

fYear

2014

Abstract

CoFeB-MgO based magnetic tunnel junction with perpendicular easy axis (p-MTJ) shows a high potential to be used in spintronics based very large scale integrated circuits and spin-transfer-torque magnetorestive random access memories. In this paper, we review development of p-MTJ using single CoFeB-MgO and double CoFeB-MgO interface structures. The TMR ratio shows 164% after annealing at 400 °C, indicating the CoFeB-MgO p-MTJs have capability for back-end-of-line. Scaling properties of p-MTJs using double CoFeB-MgO interface structure are also reviewed.

Keywords

MRAM devices; VLSI; annealing; cobalt compounds; iron compounds; magnesium compounds; magnetoelectronics; perpendicular magnetic anisotropy; tunnelling magnetoresistance; CoFeB-MgO; TMR ratio; annealing; magnetic tunnel junctions; magnetorestive random access memories; p-MTJ; perpendicular anisotropy; perpendicular easy axis; scaling properties; spin transfer torque; spintronics; temperature 400 degC; very large scale integrated circuits; Annealing; Junctions; Magnetic tunneling; Magnetoelectronics; Periodic structures; Silicon; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047160

Filename

7047160