DocumentCode
3565792
Title
Advanced non-etching adhesion promoter for next generation IC packaging
Author
Lager, M. ; Tews, D. ; Haidar, R. ; Hotz, S. ; Cho, W. ; Liong, A. ; Brooks, P.
Author_Institution
Atotech Deutschland GmbH, Berlin, Germany
fYear
2014
Firstpage
220
Lastpage
225
Abstract
In this paper findings from the development of a new Non Etching Adhesion Promoter process (NEAP) targeting inner and outer layer bonding are discussed. The herein described approach propagates a nano-scale copper structure that forms a thin anchoring layer with increased surface area, but hardly contributes to the surface roughness. The superb adhesion results obtained to a wide range of dielectrics support the hypothesis of a mechanical type of adhesion mechanism. This paper also outlines detailed examinations on impacts of the adhesion promoter to subsequent processes revealing an unaffected performance generating conductors with excellent geometries for inner- and outerlayer application and clear benefits to the industry.
Keywords
adhesion; bonding processes; etching; integrated circuit packaging; surface roughness; advanced nonetching adhesion promoter; inner layer bonding; nano-scale copper structure; next generation IC packaging; outer layer bonding; surface area; surface roughness; Adhesives; Copper; Rough surfaces; Surface morphology; Surface roughness; Surface topography; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2014 9th International
Type
conf
DOI
10.1109/IMPACT.2014.7048372
Filename
7048372
Link To Document