• DocumentCode
    3565812
  • Title

    Formation and characterization of ferroelectric Sr2Nb2O7 thin film for MFMIS-FET type non-volatile memory

  • Author

    Nakao, Y. ; Sekimoto, Y. ; Matsuura, H.

  • Author_Institution
    Dept. of Eng. & Comput. Sci., Osaka Electro-Commun. Univ., Neyagawa, Japan
  • Volume
    1
  • fYear
    2003
  • Firstpage
    96
  • Abstract
    Ferroelectric Sr2Nb2O7 (SNO) thin films are deposited on Pt/SiO2/Si by an MOD (metal-organic decomposition) method. From X-ray diffraction, some peaks corresponding to crystalline SNO are founded, and its polarization is confirmed from a Sawyer-Tower circuit. The densities and emission rates of traps in SNO layers are investigated by DCTS (discharge-current-transient spectroscopy). Three types of traps are detected, and also the density and emission rate of each trap are determined.
  • Keywords
    MIS capacitors; MISFET; X-ray diffraction; decomposition; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; field effect memory circuits; field effect transistors; sputter deposition; strontium compounds; MFMIS-FET type nonvolatile memory; Pt-SiO2-Si; Pt/SiO2/Si substrate; Sawyer-Tower circuit; Sr2Nb2O7; X-ray diffraction; discharge-current-transient spectroscopy; ferroelectric Sr2Nb2O7 thin film; metal-organic decomposition; polarization; sputter deposition; trap density; trap emission rates; Crystallization; Discrete cosine transforms; Ferroelectric materials; Niobium; Polarization; Semiconductor thin films; Sputtering; Strontium; Thin film circuits; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on
  • ISSN
    1081-7735
  • Print_ISBN
    0-7803-7725-7
  • Type

    conf

  • DOI
    10.1109/ICPADM.2003.1218361
  • Filename
    1218361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565812