• DocumentCode
    3565814
  • Title

    Silicon 3D structuring by anodization Florea ^Craciunoiu

  • Author

    Craciunoiu, F. ; Dinescu, Adrian ; Bragaru, A.

  • Author_Institution
    IMT-Bucharest, Bucharest
  • Volume
    1
  • fYear
    2008
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    Silicon anodization is an electrochemical process, by which the silicon surface can be oxidized or etched or porosificated, depending on the process parameters. The process results are also depending on the silicon type and doping level. This work reveals the results of the anodization process for p type silicon wafers, having n type islands, with controlled junction width. By applying process techniques specific to p type silicon, it can be observed a silicon 3D structuring inside the diffusion area. So, it is marked the linear graded area specific to the p-n junctions.
  • Keywords
    anodisation; diffusion; doping; electrochemistry; elemental semiconductors; etching; oxidation; p-n junctions; silicon; Si; anodization; diffusion area; doping level; electrochemical process; etching; linear graded area; oxidization; p-n junctions; porosification; Doping; Electrochemical processes; Etching; Hafnium; Impurities; Luminescence; Microelectronics; P-n junctions; Silicon; Substrates; 3D silicon structuring; anodization; p/n junctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2008. CAS 2008. International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-2004-9
  • Type

    conf

  • DOI
    10.1109/SMICND.2008.4703363
  • Filename
    4703363