DocumentCode
3565814
Title
Silicon 3D structuring by anodization Florea ^Craciunoiu
Author
Craciunoiu, F. ; Dinescu, Adrian ; Bragaru, A.
Author_Institution
IMT-Bucharest, Bucharest
Volume
1
fYear
2008
Firstpage
181
Lastpage
184
Abstract
Silicon anodization is an electrochemical process, by which the silicon surface can be oxidized or etched or porosificated, depending on the process parameters. The process results are also depending on the silicon type and doping level. This work reveals the results of the anodization process for p type silicon wafers, having n type islands, with controlled junction width. By applying process techniques specific to p type silicon, it can be observed a silicon 3D structuring inside the diffusion area. So, it is marked the linear graded area specific to the p-n junctions.
Keywords
anodisation; diffusion; doping; electrochemistry; elemental semiconductors; etching; oxidation; p-n junctions; silicon; Si; anodization; diffusion area; doping level; electrochemical process; etching; linear graded area; oxidization; p-n junctions; porosification; Doping; Electrochemical processes; Etching; Hafnium; Impurities; Luminescence; Microelectronics; P-n junctions; Silicon; Substrates; 3D silicon structuring; anodization; p/n junctions;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2008. CAS 2008. International
ISSN
1545-827X
Print_ISBN
978-1-4244-2004-9
Type
conf
DOI
10.1109/SMICND.2008.4703363
Filename
4703363
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