• DocumentCode
    3566251
  • Title

    Reduction of thermal cycling to increase the lifetime of MOSFET motor drives

  • Author

    Baars, N.H. ; Wijnands, C.G.E. ; Duarte, J.L.

  • Author_Institution
    Dept. of Electr. Eng., Eindhoven Univ. of Technol., Eindhoven, Netherlands
  • fYear
    2014
  • Firstpage
    1740
  • Lastpage
    1746
  • Abstract
    The variation of the temperature in semiconductors, caused by the load profile, results in the long term in material fatigue. A distinction can be made between the average temperature and the temperature swing, where the temperature swing has a significant effect on the lifetime of a semiconductor. Therefore, the auxiliary-pole topology is proposed to reduce the temperature swing of the MOSFETs in a motor drive. The auxiliary-pole topology divides the load current over two switching-legs and circulates a current when there is a low or zero load current. The conventional half bridge topology is used as a benchmark. Both topologies are simulated with the same load profile and with an equal total amount of silicon. The results show a reduction of the temperature swing and an increase in average temperature of the switches in the auxiliary-pole topology. This leads to an significant improvement in cycles to failure and time to failure.
  • Keywords
    field effect transistor switches; motor drives; power semiconductor switches; MOSFET motor drive lifetime; auxiliary-pole topology; switching-legs; temperature swing reduction; temperature variation; thermal cycling reduction; zero load current; Heating; Junctions; MOSFET; Power electronics; Semiconductor device modeling; Switches; Topology; Lifetime estimation; Motor drives; Power semiconductor switches; Thermal management; Thermal management of electronics; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE
  • Type

    conf

  • DOI
    10.1109/IECON.2014.7048737
  • Filename
    7048737