50 GHz high output voltage distributed amplifiers for 40 Gb/s EO modulator driver application

Author

Yuen, C. ; Laursen, K. ; Duc Chu ; Mar, K.

Author_Institution

OEpic Inc., Sunnyvale, CA, USA

Volume

1

fYear

2002

Firstpage

481

Abstract

Both single-ended and differential distributed amplifiers were developed using 0.15 /spl mu/m GaAs power PHEMT for 40 Gb/s EO modulator driver circuits. The single-ended approach has achieved 12 dB gain up to 50 GHz, greater than 5 dB gain control range and output voltage >6.5 Vp-p measured at 10 Gb/s. Power transfer data shows Psat of 20 dBm at 40 GHz, which translates to 6.3 Vp-p swing at 40 GHz. The differential approach has achieved 8 dB gain up to 45 GHz and differential output voltage of 9 Vp-p measured at 10 Gb/s. These amplifiers are suitable for use In fiber-optic communication systems.

Keywords

HEMT integrated circuits; III-V semiconductors; differential amplifiers; distributed amplifiers; electro-optical modulation; gallium arsenide; optical fibre communication; optical transmitters; 0.15 micron; 10 Gbit/s; 12 dB; 40 Gbit/s; 50 GHz; 8 dB; EO modulator driver application; GaAs; differential amplifiers; differential output voltage; distributed amplifiers; fiber-optic communication systems; output voltage; power PHEMT; power transfer data; single-ended amplifiers; Distributed amplifiers; Driver circuits; Electrooptic modulators; Gain measurement; Gallium arsenide; Optical amplifiers; PHEMTs; Power measurement; Semiconductor device measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011660

Filename

1011660