DocumentCode
3566769
Title
High phase linearity, high power handling, InGaAs photodiodes for precise timing applications
Author
Datta, Shubhashish ; Joshi, Abhay ; Becker, Don ; Howard, Roy
Author_Institution
Discovery Semicond., Ewing, NJ
fYear
2009
Firstpage
1
Lastpage
3
Abstract
We report an InGaAs p-i-n photodiode with a power-to-phase conversion factor of 5.6 rad/W at 2 V peak RF amplitude at 1 GHz frequency. In comparison, a PIN-TIA photoreceiver demonstrates 44 rad/W phase linearity at 0.44 V peak RF amplitude.
Keywords
indium compounds; optical receivers; p-i-n photodiodes; photodetectors; InGaAs p-i-n photodiode; InGaAs photodiodes; PIN-TIA photoreceiver; RF amplitude; phase linearity; power handling; power-to-phase conversion factor; Indium gallium arsenide; Linearity; Nonlinear optics; Optical attenuators; Optical noise; Optical pulses; Optical sensors; Photodiodes; Radio frequency; Timing; (040.5160) Photodetectors; (280.4788) Optical sensing and sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Print_ISBN
978-1-4244-2606-5
Electronic_ISBN
978-1-55752-865-0
Type
conf
Filename
5032986
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