A novel extraction method for a fully electro-thermal large-signal model of HBT

Author

Hyun-Min Park ; Green, R. ; Songcheol Hong

Author_Institution

Dept. EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

2

fYear

2002

Firstpage

1009

Abstract

Large-signal modeling of power HBTs is demonstrated for accurate simulation of self-heating and ambient temperature effects and nonlinear behavior such as output power, gain expansion, and IMD. The extraction was done for an in-situ output-stage device from a power amplifier circuit. The physical relationship between the device current and the rate of change in the built-in potential with respect to the device temperature has been utilized for fully electro-thermal modeling. Measurements and simulations are compared for the verification of the model under DC conditions at various temperatures. Also, the gain expansion and the sweet spot under large-signal two-tone conditions have been characterized under various harmonic loads to assess the accuracy of the model.

Keywords

III-V semiconductors; UHF bipolar transistors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; microwave power transistors; parameter estimation; power bipolar transistors; semiconductor device models; DC condition; IMD; InGaP-GaAs; InGaP/GaAs HBT; S-parameter measurements; ambient temperature effects; built-in potential; device current; electro-thermal large-signal model; forward Gummel plots; gain expansion; harmonic load conditions; in-situ output-stage device; large-signal two-tone condition; nonlinear behavior; output power; parameter extraction method; power HBT; power amplifier circuit; self-heating simulation; sweet spot; wireless communication; Circuit simulation; Circuit synthesis; Data mining; Electrical resistance measurement; Heterojunction bipolar transistors; Parameter extraction; Power amplifiers; Temperature dependence; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011801

Filename

1011801