An inductorless wideband Balun-LNA for spin torque oscillator-based field sensing

Author

Chen, T. ; Rodriguez, S. ; Akerman, J. ; Rusu, A.

Author_Institution

Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden

fYear

2014

Firstpage

36

Lastpage

39

Abstract

This paper presents a wideband inductorless Balun-LNA targeting spin torque oscillator-based magnetic field sensing applications. The LNA consists of a CS stage combined with a cross-coupled CG stage, which offers wideband matching, noise/distortion cancellation and gain boosting, simultaneously. The Balun-LNA is implemented in a 65 nm CMOS technology, and it is fully ESD-protected and packaged. Measurement results show a bandwidth of 2 GHz-7 GHz, a voltage gain of 20 dB, an IIP3 of +2 dBm, and a maximum NF of 5 dB. The LNA consumes 3.84 mW from a 1.2 V power supply and occupies a total silicon area of 0.0044 mm². The measurement results demonstrate that the proposed Balun-LNA is highly suitable for the STO-based field sensing applications.

Keywords

CMOS analogue integrated circuits; baluns; low noise amplifiers; magnetic fields; oscillators; CMOS technology; STO-based applications; bandwidth 2 GHz to 7 GHz; cross-coupled CG stage; distortion cancellation; gain 20 dB; gain boosting; inductorless wideband balun-LNA; magnetic field sensing applications; noise cancellation; noise figure 5 dB; power 3.84 mW; size 65 nm; spin torque oscillator; voltage 1.2 V; wideband matching; Gain; Impedance matching; Magnetic tunneling; Noise measurement; Sensors; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7049915

Filename

7049915