• DocumentCode
    3569019
  • Title

    A charge conserving macromodel for MOSFET´s

  • Author

    Kim, Joon-Yub ; Geiger, Randall L.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
  • Volume
    1
  • fYear
    1995
  • Firstpage
    49
  • Abstract
    A charge conserving macromodel suitable for the simulation of the charge injection behavior of MOSFET switches is presented. Simulation results using the macromodel are compared with the experimental data in the literature. The performance of the macromodel at high switching speed is demonstrated
  • Keywords
    MOSFET; capacitance; electric charge; field effect transistor switches; semiconductor device models; MOSFET model; MOSFET switches; charge conserving macromodel; charge injection behavior simulation; high switching speed; Capacitors; Circuit simulation; Computational modeling; Computer simulation; Impedance; MOSFET circuits; Parasitic capacitance; SPICE; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
  • Print_ISBN
    0-7803-2972-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1995.504375
  • Filename
    504375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3569019