An energy efficient multi-bit TSV transmitter using capacitive coupling

Author

Gorner, Johannes ; Hoppner, Sebastian ; Walter, Dennis ; Haas, Michael ; Plettemeier, Dirk ; Schuffny, Rene

Author_Institution

Tech. Univ. Dresden, Dresden, Germany

fYear

2014

Firstpage

650

Lastpage

653

Abstract

This paper presents a transmitter for Network in Chip Stack (NiCS) high-speed serial point to point links using Through Silicon Vias. A low voltage swing capacitive coupling four level multi-bit transmitter is proposed. It is suitable for low resistive bulk substrates with a small coupling between signal channels. The transmitter has been implemented in 28nm CMOS technology and verified by circuit simulations. The influence of the TSV substrate conductivity is analyzed. The transmitter achieves an energy efficiency of 50 fJ/Bit at 8 Gbit/s data rate for a TSV side wall capacitance of 460 fF.

Keywords

CMOS integrated circuits; coupled circuits; energy conservation; high-speed integrated circuits; network-on-chip; stacking; three-dimensional integrated circuits; transmitters; CMOS technology; NiCS; TSV side wall capacitance; TSV substrate conductivity; bit rate 8 Gbit/s; capacitance 460 fF; circuit simulations; data rate; energy efficiency; four level multibit TSV transmitter; high-speed serial point to point links; low resistive bulk substrates; low voltage swing capacitive coupling; network in chip stack; signal channels; size 28 nm; through silicon vias; CMOS integrated circuits; Capacitance; Couplings; Integrated circuit modeling; Substrates; Through-silicon vias; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7050069

Filename

7050069