DocumentCode
3571691
Title
A GaAs Heterojunction Bipolar Transistor ECL Divide by 4 Circuit Operating at Greater than 5.6 GHz
Author
Hayes, R.C. ; Eddison, C.G. ; Greenwood, C.J. ; Topham, P.J. ; Goodridge, I. ; Benn, D V A
Author_Institution
Plessey Research Caswell Ltd, Caswell, Towcester, Northants, England, NN12 8EQ
fYear
1987
Firstpage
217
Lastpage
223
Abstract
GaAs/GaAlAs HJBT divide by four circuits have been fabricated with 1.5¿m and 2¿m feature sizes (2.5¿m and 4¿m equivalent emitters). The maximum divide by four frequency was determined as a function of DC bias for both geometries. On-wafer measurements were compared with those obtained from ICs assembled into conventional, and microwave packages. The highest divide by four frequency of 5.6GHz was attained by a 2.5¿m emitter transistor IC.
Keywords
Circuits; Clocks; Frequency conversion; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Microwave measurements; Packaging; Radio frequency; Resistors; ECL divide-by-four circuits; GaAs/GaAlAs HBTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-state Circuits Conference, 1987. ESSCIRC '87. 13th European
Print_ISBN
3800715341
Type
conf
Filename
5434917
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