• DocumentCode
    3572105
  • Title

    A New Static Memory Cell with 880 μm2 in Double Polysilicon Technology

  • Author

    Schrader, Lothar ; Meusburger, G?¼nther

  • Author_Institution
    SIEMENS AG, Hofmannstrasse 51, 8000 M?ƒ??nchen 70, West-Germany
  • fYear
    1977
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    A new static memory cell based on the Schmitt trigger is presented. A cell area of 880μm2 was achieved by using double polysilicon technology with 3μm line width and an average power consumption of 6μW/cell (UDD = 5V) was measured.
  • Keywords
    Area measurement; Capacitors; Energy consumption; Impedance; Logic circuits; Random access memory; Read-write memory; Transient analysis; Trigger circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
  • Print_ISBN
    380071132X
  • Type

    conf

  • Filename
    5435049
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572105