Fabrication of striped channel pseudomorphic HEMTs

We report the fabrication and characteristics of striped channel pseudomorphic high electron mobility transistor with a 0.3 ¿m T-shaped gate. This device is made up of multiple narrow channels extending from source to drain. The aim is to confine a two-dimensional electron gas in the lateral direction, and also to form a quasi one-dimensional electron gas. The channel period is 0.7 ¿m and the width is about 0.15 ¿m. A change in the pinch-off voltage and an improvement in the normalized transconductance have been obtained. We explain these results in a more efficient charge control due to the lateral confinement of the electron gas. In addition, an enhancement in the drain conductance has been found. To summarize, a striped channel PM-HEMT present a better charge control than a conventional PM-HEMT.