• DocumentCode
    3572800
  • Title

    Thin High-Dielectric TiO2 Films Prepared by Low Pressure MOCVD

  • Author

    Rausch, N. ; Burte, E.P.

  • Author_Institution
    Fraunhofer Arbeitsgruppe f?ƒ??r Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, FRG
  • fYear
    1992
  • Firstpage
    725
  • Lastpage
    728
  • Abstract
    Metal organic chemical vapor deposition (MOCVD) at low pressure was used to prepare thin titanium dioxide films in a hot wall-type vertical furnace for the application to ultra large scale integrated (ULSI) circuits as a dielectric material in low-power high-density DRAM´s. Stoichiometry, structure, as well as electrical properties were investigated before and after a post-deposition annealing treatment in oxygen atmosphere.
  • Keywords
    Annealing; Chemical vapor deposition; Circuits; Dielectric materials; Dielectric thin films; Furnaces; MOCVD; Organic chemicals; Titanium; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572800