Fabrication of topological-switching RAM (TRAM)

Author

Takaura, N. ; Ohyanagi, T. ; Tai, M. ; Morikawa, T. ; Kinoshita, M. ; Akita, K.

Author_Institution

Phase Change Device Res. Group, Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan

fYear

2014

Firstpage

1

Lastpage

4

Abstract

The fabrication of topological-switching random-access memory (TRAM), a new type of phase change memory, was investigated. The deposition and etching process technologies of a GeTe/Sb₂Te₃ superlattice memory cell were developed and micro test structures of TRAM were fabricated. Analysis of the fabricated structures revealed that the electrical properties of TRAM were different from those of conventional phase change memory and the reset voltage of TRAM, 0.6 V, was less than that of PRAM, 1 V. The non-melting behaviors of resistance change in TRAM were clarified via thermal-conductivity measurements and device simulation.

Keywords

coating techniques; etching; integrated circuit manufacture; phase change memories; superlattices; switching circuits; thermal conductivity measurement; thermal management (packaging); GeTe-Sb₂Te₃; PRAM; TRAM fabrication; deposition process technologies; etching process technologies; microtest structures; phase change memory; superlattice memory cell; thermal-conductivity measurements; topological-switching random-access memory; voltage 0.6 V; voltage 1 V; Dry etching; Films; Phase change random access memory; Resistance; Thermal conductivity; Charge Injection enhancement; GeTe/Sb2Te3 superlattice; TRAM (Topplogical switching RAM);

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual

Print_ISBN

978-1-4799-4203-9

Type

conf

DOI

10.1109/NVMTS.2014.7060835

Filename

7060835