• DocumentCode
    3578109
  • Title

    A TDC based process variation sensor for both NMOS and PMOS variation monitoration

  • Author

    Lei Ai ; Yandong He ; Ganggang Zhang ; Xing Zhang

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A TDC based process variation sensing circuit for monitoring the variation of both NMOS and PMOS is proposed. The digital outputs of this sensor can offer the circuit designer clear message that indicates the variation of both NMOS and PMOS. Based on the specific inverter chain design concept, this sensor demonstrated with better sensitivity. 10000 Monte Carlo Simulation based on 65nm bulk CMOS process technology is used to verify the feasibility of this sensor.
  • Keywords
    CMOS integrated circuits; Monte Carlo methods; network synthesis; sensors; CMOS process technology; Monte Carlo simulation; NMOS; PMOS; TDC; circuit designer; inverter chain design; process variation sensor; size 65 nm; Logic gates; MOS devices; Monitoring; TDC; digital output; process variation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061185
  • Filename
    7061185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578109