Magnetic microscopy for 3D devices failure localization and analysis

Author

Yuan Chen ; Na Lin

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., 5th Electron. Inst., Guangzhou, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

The magnetic microscopy was successfully applied to localize the failure site of the failed SDP memory sample before the decapsulation of the failed sample. The magnetic microscopy pointed the specific (X, Y, Z) coordinate of the failure site and the failure site was confirmed by optical microscopy and SEM analysis. The failure analysis case demonstrated in this article showed the effectiveness of the magnetic microscopy in the failure localization for 3D device.

Keywords

failure analysis; integrated circuit packaging; integrated circuit reliability; optical microscopy; scanning electron microscopy; three-dimensional integrated circuits; 3D device failure analysis; 3D device failure localization; SDP memory sample; SEM analysis; failed sample decapsulation; failure analysis case; failure site localization; magnetic microscopy; optical microscopy; stacked die packaging memory; Magnetic analysis; Magnetic force microscopy; Magnetic resonance imaging; Microscopy; Optical imaging; Optical microscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061193

Filename

7061193