• DocumentCode
    3578121
  • Title

    Characterization of anodic bonding induced diaphragm deflection in pressure sensor

  • Author

    Xian Huang ; Dacheng Zhang

  • Author_Institution
    Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper discussed the anodic bonding induced diaphragm deflection in the ultra-sensitive piezoresistive pressure sensor and its effect on the zero-offset output of the sensor. After anodic bonding, upward deflection of the diaphragm was measured by a 3D optical profiler as well as the large negative zero-offset voltage. The difference of thermal expansion coefficient (TEC) between Si and glass wafers was believed responsible for phenomena. Finite Element Analysis (FEA) was applied to study the diaphragm deflection and the residue stress, the simulation results were in good agreement with experimental measurements.
  • Keywords
    diaphragms; finite element analysis; internal stresses; mechanical variables measurement; optical sensors; piezoresistive devices; pressure sensors; silicon; thermal expansion; 3D optical profiler; Si-SiO2; TEC; anodic bonding; diaphragm deflection measurement; finite element analysis; glass wafer; negative zero offset voltage; residue stress; thermal expansion coefficient; ultrasensitive piezoresistive pressure sensor; Bonding; Glass; Optical variables measurement; Silicon; Stress; Three-dimensional displays; Voltage measurement; anodic bonding; diaphragm deflection; finite element analysis; pressure sensor; thermal expansion coefficient mismatch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061197
  • Filename
    7061197