• DocumentCode
    3578129
  • Title

    A Phase Change Memory SPICE model adaptable to different device geometry

  • Author

    Xian Zheng ; Yiqun Wei ; Xinnan Lin ; Yuefeng Gong ; Yan Liu ; Xiaole Cui ; Zhitang Song

  • Author_Institution
    Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A SPICE model of Phase Change Memory (PCM) is developed based on a proposed analytical resistance model, which enables the PCM circuit simulation adaptable to different device geometry for the first time. The model agrees with experimental data and results show it is able to predict device characteristics with different geometry.
  • Keywords
    SPICE; phase change memories; PCM circuit simulation; SPICE model; device geometry; phase change memory; Adaptation models; Current measurement; Informatics; SPICE model; phase-change memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061205
  • Filename
    7061205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578129