Electronic and electrothermal switching dynamics in chalcogenide-based phase-change memory (PCM)

Towards reliability optimization of chalcogenide-based phase-change memory cells, the study on transport and phase-transition models are necessary. A threshold switch model based on the hopping transport mechanism and the field-assisted trap-to-band excitation mechanism is presented, accounting for the scaling dependence of the threshold voltage and current. The read reliability issues related to the structure relaxation effect are discussed using this model. A phase switch algorithm based on the nucleation-growth theory and Monte-Carlo method is achieved, which is able to model the random nuclei generation and growth progress including interface effect. Through the simulations of nucleation dominant material and growth dominant material, the prospect of nucleation-growth phenomenon is shown. The data retention capability is evaluated by the model.