DocumentCode
3578201
Title
A 0.15µm gate InAlN/GaN HEMT with thin barrier layer
Author
Jianjun Zhou ; Xun Dong ; Haiyn Lu ; Ceng Kong ; Yuechan Kong ; Tangsheng Chen ; Chen Chen
Author_Institution
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
High quality thin barrier layer In0.18Al0.82N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 μm gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate bias. The device show good pinch-off performance. A high transconductance of 482 mS/mm and current gain cutoff frequency of 80GHz were measured without de-embedding.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device manufacture; wide band gap semiconductors; HEMT; In0.18Al0.82N-GaN; MOCVD; drain current; frequency 80 GHz; high transconductance; metal-organic chemical vapor deposition; size 0.15 mum; thin barrier layer; zero gate bias; Gallium nitride; Logic gates; Performance evaluation; TV; InAlN/GaN HEMT; millimeter-wave; thin barrier;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061277
Filename
7061277
Link To Document