Compact modeling of GaN HEMTs for microwave high power amplifier design

GaN HEMTs are currently known as one of the most important technology for microwave high power amplifiers (HPAs). In the perspective of efficiency design of high performance GaN devices and MMICs, the compact nonlinear model for GaN HEMTs is in greatly demand recently because of the unique phenomenons in GaN devices compared with GaAs devices. This paper presents our effects and results in development of compact nonlinear model of GaN HEMT for microwave power amplifier, and the further works in this area are also discussed.