A Two-Dimensional Subthreshold Current Model of Recessed-Source/Drain (Re-S/D) SOI MOSFETs with High-k Dielectric

Author

Saramekala, Gopi Krishna ; Tiwari, Pramod Kumar

Author_Institution

Dept. of Electron. & Commun. Eng, Nat. Inst. of Technol., Rourkela, India

fYear

2014

Firstpage

258

Lastpage

263

Abstract

An analytical surface-potential based sub threshold current model for short-channel recessed-source/ drain (Re-S/D) SOI MOSFETs with high-k dielectric is presented in this paper. The two-dimensional (2D) Poisson´s equation has been solved in the channel region with suitable boundary conditions in order to determine the surface potential. The diffusion component of current density is considered for the sub threshold current modeling. The impact of EOT (Effective Oxide Thickness) (t´_ox), channel Length (L), gate-dielectric constant (ε´_ox) on sub threshold current has been investigated. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLAS^TM, a two dimensional device simulator from SILVACO.

Keywords

MOSFET; Poisson equation; current density; high-k dielectric thin films; permittivity; semiconductor device models; silicon-on-insulator; surface potential; 2D Poisson equation; 2D subthreshold current model; boundary conditions; channel length; current density; diffusion component; effective oxide thickness; gate-dielectric constant; high-k dielectric; recessed-drain SOI MOSFET; recessed-source SOI MOSFET; surface potential; Analytical models; Electric potential; Logic gates; MOSFET; Semiconductor device modeling; Silicon; Subthreshold current; gate dielectric constant; mimimum surface potential; recessed-source/ drain (Re-S/D); subthreshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Modelling Symposium (AMS), 2014 8th Asia

Print_ISBN

978-1-4799-6486-4

Type

conf

DOI

10.1109/AMS.2014.58

Filename

7079311