Modeling of thermal behavior in the amorphous silicon thin film transistors

Author

Yuan Liu ; Yunfei En ; Yujuan He ; Zhifeng Lei

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., Guangzhou, China

fYear

2014

Firstpage

142

Lastpage

145

Abstract

This paper proposed a two-dimensional thermal impedance model for amorphous silicon thin film transistors (a-Si:H TFTs) from a system of coupled energy equations, heat flowing equations and boundary conditions. By using of this model, the channel temperature distribution and thus the maximum channel temperature can be calculated. This model can be applied to describe the thermal behavior and thermal reliability of a-Si:H TFTS in the design phase.

Keywords

amorphous semiconductors; heat transfer; semiconductor device reliability; silicon; temperature distribution; thermal analysis; thin film transistors; Si; TFT; amorphous thin film transistors; boundary conditions; channel temperature distribution; coupled energy equation system; design phase; heat flowing equations; maximum channel temperature; thermal behavior modeling; thermal reliability; two-dimensional thermal impedance model; Heating; Integrated circuit interconnections; Integrated circuit modeling; Logic gates; Mathematical model; Temperature distribution; Thin film transistors; amorphous silicon; temperature distribution; thermal impedance; thin film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on

Print_ISBN

978-1-4799-6631-8

Type

conf

DOI

10.1109/ICRMS.2014.7107155

Filename

7107155