DocumentCode
3589765
Title
Au electromigration and Ti segregation in TiPtAu gate of PHEMTs
Author
Yun Huang ; Shajin Li
Author_Institution
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., Guangzhou, China
fYear
2014
Firstpage
153
Lastpage
156
Abstract
In the paper, an evaluation structure was designed to investigate the degradation of gate metal in PHEMTs, and it can be used to separately appraise the resisted electromigration levels of the evaporated Ti/Pt/Au and the electroplated Au. The results show that the electromigration resistant level of electroplated Au of Ti/Pt/Au-Au is at least four times lower than that of the evaporated Ti/Pt/Au. For the elements of Au, Ga and Ti in gate metal of Ti/Pt/Au-Au, the degradation of diffusing migration was observed by SIMS. In addition, serious segregation and influx for the element of Ti destroyed the performance of the Schottky barrier in gate structure.
Keywords
Schottky barriers; electromigration; electroplating; high electron mobility transistors; segregation; titanium compounds; PHEMT; Schottky barrier; TiPtAu; electromigration resistant level; gate metal; gate structure; Degradation; Electromigration; Gold; Logic gates; PHEMTs; Thermal stability; PHEMT; electromigration; segregation;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN
978-1-4799-6631-8
Type
conf
DOI
10.1109/ICRMS.2014.7107158
Filename
7107158
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