• DocumentCode
    3590014
  • Title

    An improved multiple edge responses method for memory simulation considering worst case and nonlinear crosstalk

  • Author

    Shiji Pan ; Jiangyuan Qian

  • Author_Institution
    Inphi Corp., Santa Clara, CA, USA
  • fYear
    2015
  • Firstpage
    139
  • Lastpage
    143
  • Abstract
    Although multiple edge responses method has been proven effective to capture the input and output nonlinearity in a channel simulation, the method may not be applicable for memory simulation due to the nonlinear crosstalk effect and also the requirement of a massive number of step responses, which significantly reduces the simulation efficiency. In this work, we present an improved simulation methodology involving multiple edge responses to accurately estimate the worst-case eye diagram, specifically applicable for memory simulation. The proposed method is able to capture the nonlinearity effect due to crosstalk, plus has nearly 20 times simulation acceleration compared with the traditional long random input bit pattern simulation, based on a multiple processors system.
  • Keywords
    crosstalk; intersymbol interference; microprocessor chips; bit pattern simulation; channel simulation; input nonlinearity; memory simulation; multiple edge responses method; multiple processors system; nonlinear crosstalk effect; output nonlinearity; worst-case eye diagram; Apertures; Crosstalk; Integrated circuit modeling; Jitter; Personal digital assistants; Program processors; Switches; DDR; eye diagram; intersymbol interference; memory; multiple edge responses; nonlinearity; parallel link; peak distortion analysis; worst case crosstalk;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility and Signal Integrity, 2015 IEEE Symposium on
  • Print_ISBN
    978-1-4799-1992-5
  • Type

    conf

  • DOI
    10.1109/EMCSI.2015.7107674
  • Filename
    7107674