DocumentCode
3590014
Title
An improved multiple edge responses method for memory simulation considering worst case and nonlinear crosstalk
Author
Shiji Pan ; Jiangyuan Qian
Author_Institution
Inphi Corp., Santa Clara, CA, USA
fYear
2015
Firstpage
139
Lastpage
143
Abstract
Although multiple edge responses method has been proven effective to capture the input and output nonlinearity in a channel simulation, the method may not be applicable for memory simulation due to the nonlinear crosstalk effect and also the requirement of a massive number of step responses, which significantly reduces the simulation efficiency. In this work, we present an improved simulation methodology involving multiple edge responses to accurately estimate the worst-case eye diagram, specifically applicable for memory simulation. The proposed method is able to capture the nonlinearity effect due to crosstalk, plus has nearly 20 times simulation acceleration compared with the traditional long random input bit pattern simulation, based on a multiple processors system.
Keywords
crosstalk; intersymbol interference; microprocessor chips; bit pattern simulation; channel simulation; input nonlinearity; memory simulation; multiple edge responses method; multiple processors system; nonlinear crosstalk effect; output nonlinearity; worst-case eye diagram; Apertures; Crosstalk; Integrated circuit modeling; Jitter; Personal digital assistants; Program processors; Switches; DDR; eye diagram; intersymbol interference; memory; multiple edge responses; nonlinearity; parallel link; peak distortion analysis; worst case crosstalk;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility and Signal Integrity, 2015 IEEE Symposium on
Print_ISBN
978-1-4799-1992-5
Type
conf
DOI
10.1109/EMCSI.2015.7107674
Filename
7107674
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