HEMT statistical modeling using Monte Carlo method combined with Principal Components Analysis

A statistical methodology is presented for the extraction of equivalent circuit arameters (ECP´s) of high electron mobility transistors (HEMT). This methodology, based upon the Principal Component Analysis (PCA) combined with the Monte Carlo method, can be successfully employed for evaluating HEMT´s reliability and their technological dispersion effects, too. Furthermore the method provides an efficient system to derive ECP´s values when the measured ones are not available. Thanks to this procedure the device designer can gain a noticeable aid during the design.