DocumentCode
3596609
Title
Study of growth of in situ Ga-catalyzed AlGaAs nanostructures using MOVPE technique
Author
Bag, Rajesh K. ; Lohani, J. ; Tyagi, R. ; Pandya, D.K. ; Singh, R.
Author_Institution
Solid State Phys. Lab., Delhi, India
fYear
2014
Firstpage
1
Lastpage
4
Abstract
In situ Ga-catalyzed AlGaAs nanostructures have been grown by MOVPE. The effect of growth temperature on the shape, size, tapering, and spatial distribution of nanostructures has been investigated using the FESEM technique. Micro-PL measurements have been conducted to analyze the optical quality of the nanostructures. Aluminum composition of around 13% has been estimated by multiple peak-fitting of the PL spectrum.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; field emission electron microscopy; gallium arsenide; nanofabrication; nanostructured materials; photoluminescence; scanning electron microscopy; vapour phase epitaxial growth; AlGaAs; FESEM; MOVPE technique; nanostructured materials; optical quality; photoluminescence; shape distribution; size distribution; spatial distribution; tapering; Epitaxial growth; Gallium arsenide; Nanowires; Substrates; Surface treatment; Temperature measurement; AlGaAs; MOVPE; micro-PL; nanostructures;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN
978-1-4673-6527-7
Type
conf
DOI
10.1109/ICEmElec.2014.7151186
Filename
7151186
Link To Document