Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode

Author

Das, Subhashis ; Majumder, S. ; Kumar, R. ; Mahata, M.K. ; Dinara, S.M. ; Biswas, D.

Author_Institution

Adv. Technol. Dev. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

A physics-based analytical modeling for the gas sensor application of AlGaN/GaN heterostructure Schottky diode has been investigated for high linearity and sensitivity of the device. The heterointerface and surface properties are exploited here. The dependency of 2DEG on the surface charge, which is dependent on the Si₃N₄ passivation layer, is mainly utilized to model the device. The simulation of Schottky diode has been performed in the TCAD tool and I-V curves are generated. From the I-V curves, 54% response has been recorded in presence of 500 ppm gas and at biasing voltage of 0.95 Volts.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gas sensors; passivation; silicon compounds; wide band gap semiconductors; Si₃N₄-AlGaN-GaN; TCAD tool; current-voltage curves; gas sensor; heterointerface properties; heterostructure Schottky diode; passivated Schottky diode; surface properties; voltage 0.95 V; Aluminum gallium nitride; Gallium nitride; Gas detectors; HEMTs; MODFETs; Wide band gap semiconductors; 2DEG; AlGaN/GaN heterostructure; Schottky diode; gas sensor; modeling; passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151192

Filename

7151192