Electron emission Si-based resonant-tunneling diode

New type of field emission resonant tunneling diode has been proposed and investigated as theoretically and experimentally. It based on Si-SiO_x-Si multilayer cathode containing SiO_x layer as input potential barrier, Si layer as quantum well and vacuum layer as output potential barrier of double barrier quantum structure. The calculation predicted the existence of the resonant maxima (three or four in dependence of input barrier height) on the current density - electric field dependences. Frequency dependences pointed out on appearance of negative conductance resulted from resonant tunnelling through the second energy level in QW at a series of transit angle (θ_up) values. The maximal values of optimal and upper frequency about 1.5 THz and 2 THz are reached at θ_up close to 0.45π when resonant tunnelling occurs through the third resonant level in QW. Experimental results confirmed the existence of the resonance peak in investigated resonant-tunnelling structure.