• DocumentCode
    3597135
  • Title

    A study on efficiency improvement of Doherty amplifier using LDMOS FET for WiMax networks

  • Author

    Kwon, Hyukyong ; Yoo, Chae up ; Kim, Min-su ; Yang, Younggoo

  • Author_Institution
    Dept. of Mobile Commun. Eng., Sungkyunkwan Univ., Suwon
  • Volume
    2
  • fYear
    2009
  • Firstpage
    1406
  • Lastpage
    1409
  • Abstract
    This paper describes Doherty technology, which has been used in design of WiMax power amplifier to improve its high efficiency and linearity. Doherty amplifier´s efficiency compare to AB Class power amplifier, 2-way LDMOS FET (2 pcs) has been applied. The results have showed that Doherty amplifier has 10% higher efficiency compare to usual AB Class power amplifier.
  • Keywords
    UHF power amplifiers; WiMax; field effect transistor circuits; 2-way LDMOS FET; Doherty amplifier design; WiMax power amplifier design; amplifier efficiency improvement; Circuit faults; Cities and towns; FETs; Frequency division multiplexing; High power amplifiers; Impedance; Linearity; Operational amplifiers; Power amplifiers; WiMAX; ACLR (Adjacent Channel Leakage Ratio); DPA (Doherty Power Amplifier); EVM (Error Vector Magnitude); OFDM (Orthogonal Frequency-division Multiplexed); Power-Add Efficiency (PAE);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Communication Technology, 2009. ICACT 2009. 11th International Conference on
  • ISSN
    1738-9445
  • Print_ISBN
    978-89-5519-138-7
  • Electronic_ISBN
    1738-9445
  • Type

    conf

  • Filename
    4809678