Comparison of (n+) a-Si:H /(p) c-Si Heterojunction Emitters using a-Si:H Films Deposited by PECVD or HWCVD

Author

Martin, Isidro ; Munoz, Delfina ; Voz, Cristobal ; Vetter, Michael ; Alcubilla, Ramon ; Damon-Lacoste, Jerome ; Cabarrocas, Pere Rocai ; Villar, Fernando ; Bertomeu, Joan ; Andreu, Jordi

Author_Institution

Dept. d´´Enginyeria Elettronica, Univ. Politecnica de Catalunya, Barcelona

Volume

1

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

1091

Lastpage

1094

Abstract

In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use spectroscopic ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH ₃ flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied V_oc values exceeding 665 mV

Keywords

amorphous semiconductors; chemical vapour deposition; electrical conductivity; elemental semiconductors; ellipsometry; hydrogen; passivation; plasma CVD; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; HWCVD; HWCVD HIT emitters; PECVD; PECVD HIT emitters; QSS-PC measurements; Si:H-Si; dark conductivity; heterojunction intrinsic thin-film; material properties; silicon heterojunction emitters; silicon heterojunction solar cells; spectroscopic ellipsometry measurements; Chemical vapor deposition; Conductive films; Conductivity; Ellipsometry; Heterojunctions; Material properties; Passivation; Photovoltaic cells; Spectroscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279332

Filename

4059823