• DocumentCode
    3599265
  • Title

    Preparation and characterization of thermoelectric /spl beta/-FeSi2 phase dispersed with Si

  • Author

    Min, Byoung-Gue ; Jang, Kyung-Wook ; Lee, Dong-Hi

  • Author_Institution
    Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea
  • fYear
    1996
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    Heat treatment of a single phase of Fe-Si system produced eutectoid microstructures consisted of /spl beta/ and Si phases. The volume fraction of Si dispersoids, 0.1/spl sim/0.25 /spl mu/m in size, was controlled by varying Si content within the compositional range of /spl alpha/ single phase. The dispersed Si particles in the /spl beta/ matrix acted as effective scattering centers for carriers as well as phonons.
  • Keywords
    crystal microstructure; electrical resistivity; grain size; heat treatment; iron compounds; semiconductor growth; semiconductor materials; silicon; thermal conductivity; thermoelectric power; 0.1 to 0.25 mum; FeSi/sub 2/-Si; effective scattering centers; eutectoid microstructures; thermoelectric /spl beta/-FeSi/sub 2/ phase dispersed with Si; Conductivity measurement; Dispersion; Heat treatment; Iron; Lattices; Microstructure; Particle scattering; Phonons; Thermal conductivity; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1996., Fifteenth International Conference on
  • Print_ISBN
    0-7803-3221-0
  • Type

    conf

  • DOI
    10.1109/ICT.1996.553258
  • Filename
    553258