Radiation damage of standard and oxygenated silicon diodes by 16 and 27 MeV protons

The effects of irradiation by 16 MeV and 27 MeV protons on standard and oxygenated silicon diodes, processed by different technologies, have been investigated. The acceptor creation rate β, after type inversion can be lower for standard diodes than for state of the art oxygenated devices, suggesting that the role of oxygen is more complex than expected and must be folded with the technology of the fabrication process. In addition we show the inaccuracy of the β normalization by the non-ionizing energy loss factor not only for oxygenated diodes but also for standard non-oxygenated devices