Thickness Dependence of Localization to the Anomalous Hall Effect in Amorphous CoFeB Thin Films

Author

Zhu, T. ; Wu, S.B.

Author_Institution

Beijing Nat. Lab. for Condensed Matter Phys., Inst. of Phys., Beijing, China

Volume

51

Issue

11

fYear

2015

Firstpage

1

Lastpage

4

Abstract

The thickness dependence of anomalous Hall effect in the amorphous CoFeB thin films has been investigated. A dimensional crossover of electron conduction from 2-D to 3-D in weak localization (WL) has been observed when the film is thicker than 8.5 nm. Meanwhile, the scaling of the anomalous Hall conductivity to the longitudinal conductivity at low temperature, σAH ∝ σ n xx, also shows the same dimensional crossover of the scaling exponent, n, from 2.3 to 1.2. However, the scaling exponent is corrected to 1.58 after subtracting the contribution of WL effect from the conductance, which indicates that the unified theory, σAH ∝ σ1.6/ xx , is still universally verified for the strongly disordered alloys.

Keywords

Hall effect; amorphous state; boron alloys; cobalt alloys; electrical conductivity; iron alloys; low-temperature techniques; metallic thin films; weak localisation; 2-D weak localization; 3-D weak localization; Co₄₀Fe₄₀B₂₀; amorphous cobalt iron boride thin films; anomalous Hall conductivity; anomalous Hall effect; electron conduction; low-temperature effects; scaling exponent; strongly disordered alloys; thickness dependence; unified theory; Conductivity; Films; Hall effect; Metals; Resistance; Temperature dependence; Temperature measurement; Anomalous Hall effect (AHE); anomalous Hall effect; dimensional crossover; weak localization; weak localization (WL);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2015.2435259

Filename

7110623