• DocumentCode
    3605842
  • Title

    Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes

  • Author

    Geonwook Yoo ; Sungho Lee ; Byoungwook Yoo ; Chuljong Han ; Sunkook Kim ; Min Suk Oh

  • Author_Institution
    Display Convergence Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
  • Volume
    36
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1215
  • Lastpage
    1218
  • Abstract
    We demonstrate a two-dimensional (2D) multilayered molybdenum disulfide (MoS2) transistor with molybdenum (Mo) side and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-effect mobility of 23.9 cm2/Vs and ON/OFF ratio of 106 in a linear region. A current-voltage study under different temperatures (300-393 K) reveals that the Mo-MoS2 transistor shows a band transport characteristics, and a Schottky barrier height of 0.14 eV is estimated using a thermionic emission theory. Finally, the side and edge contacts of Mo-MoS2 are confirmed through the transmission electron microscope analysis. Our results not only show that Mo can be an alternative contact metal to other low work-function metals but also that the edge contact may play an important role in resolving the performance degradation over thickness increase of the MoS2 channel layer.
  • Keywords
    Schottky barriers; electrical contacts; electrodes; molybdenum compounds; multilayers; sputter deposition; thermionic emission; transistors; transmission electron microscopy; work function; MoS2; Schottky barrier height; band transport characteristics; contact metal; current-voltage study; dc-sputtering method; edge contacts; electrical contact analysis; field-effect mobility; low work-function metals; molybdenum source/drain electrodes; multilayer transistor; temperature 300 K to 393 K; thermionic emission theory; transmission electron microscope analysis; two-dimensional multilayered molybdenum disulfide transistor side contacts; Contacts; Image edge detection; Iron; Molybdenum; Nonhomogeneous media; Transistors; Contact resistance; Edge contact; MoS2; Molybdenum; Schottky barrier; contact resistance; edge contact;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2478899
  • Filename
    7268874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3605842