The cm Electron Concentration and Low Specific Contact Resistivity of

The phosphorus incorporation by chemical vapor deposition and activation by laser annealing reaches the electron concentration of ~3 × 10²⁰ cm^-3. The pulsed laser not only activates the phosphorus but also produces the biaxial tensile strain of 0.35%. With the nickel germanide contact, the specific contact resistivity reaches as low as 1.5 × 10^-8 Ω-cm² by greatly reducing the tunneling distance. Due to 4% misfit between Ge and Si, there are still misfit dislocations near the Ge/Si interface. The misfit dislocations at the Ge/Si interface lead to the ideality factor of 1.6 for the Ge/Si hetero-junction diode with ON/OFF ratio of ~1 × 10⁵.