• DocumentCode
    3608622
  • Title

    Observation of zero linewidth enhancement factor at excited state band in quantum dot laser

  • Author

    Zubov, F.I. ; Maximov, M.V. ; Moiseev, E.I. ; Savelyev, A.V. ; Shernyakov, Y.M. ; Livshits, D.A. ; Kryzhanovskaya, N.V. ; Zhukov, A.E.

  • Author_Institution
    St. Petersburg Acad. Univ., St. Petersburg, Russia
  • Volume
    51
  • Issue
    21
  • fYear
    2015
  • Firstpage
    1686
  • Lastpage
    1688
  • Abstract
    The linewidth enhancement factor (LEF) of an InAs/InGaAs quantum dot Fabry-Pérot laser in a wide wavelength range from 1110 to 1300 nm, including ground state (GS) and exited state (ES) bands, is studied. LEF spectra were derived from amplified spontaneous emission spectra measured below the threshold in the pulse regime. The ES optical transition is characterised by significantly lower values of the LEF (≤0.54) as compared to the GS (≥1.21). Moreover, a zero LEF is observed within the ES spectral band. At sufficiently high currents, a near-zero LEF (|α| ≤ 0.1) is achieved in a wide spectral interval from 1146 to 1175 nm, in which the optical gain is not less than 9 cm-1.
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; laser beams; quantum dot lasers; spontaneous emission; InAs-InGaAs; amplified spontaneous emission spectra; excited state band; ground state; optical gain; optical transition; quantum dot Fabry-Perot laser; wavelength 1110 nm to 1300 nm; zero linewidth enhancement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.2512
  • Filename
    7300527