DocumentCode
3608622
Title
Observation of zero linewidth enhancement factor at excited state band in quantum dot laser
Author
Zubov, F.I. ; Maximov, M.V. ; Moiseev, E.I. ; Savelyev, A.V. ; Shernyakov, Y.M. ; Livshits, D.A. ; Kryzhanovskaya, N.V. ; Zhukov, A.E.
Author_Institution
St. Petersburg Acad. Univ., St. Petersburg, Russia
Volume
51
Issue
21
fYear
2015
Firstpage
1686
Lastpage
1688
Abstract
The linewidth enhancement factor (LEF) of an InAs/InGaAs quantum dot Fabry-Pérot laser in a wide wavelength range from 1110 to 1300 nm, including ground state (GS) and exited state (ES) bands, is studied. LEF spectra were derived from amplified spontaneous emission spectra measured below the threshold in the pulse regime. The ES optical transition is characterised by significantly lower values of the LEF (≤0.54) as compared to the GS (≥1.21). Moreover, a zero LEF is observed within the ES spectral band. At sufficiently high currents, a near-zero LEF (|α| ≤ 0.1) is achieved in a wide spectral interval from 1146 to 1175 nm, in which the optical gain is not less than 9 cm-1.
Keywords
Fabry-Perot resonators; III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; laser beams; quantum dot lasers; spontaneous emission; InAs-InGaAs; amplified spontaneous emission spectra; excited state band; ground state; optical gain; optical transition; quantum dot Fabry-Perot laser; wavelength 1110 nm to 1300 nm; zero linewidth enhancement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2015.2512
Filename
7300527
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