Transconductance improvement technique for bulk-driven OTA in nanometre CMOS process

A transconductance improvement technique for a bulk-driven operational transconductance amplifier (OTA) working in the weak inversion region is presented. Using the quasi-floating gate method, the proposed technique achieves larger transconductance improvement than conventional approaches with the CMOS technologies scaling. Moreover, its enhanced performance is at no expense of the power budget. Simulated on UMC 180 nm technology, the results demonstrate that the proposed bulk-driven OTA achieves more than two times gain-bandwidth improvement than that of the traditional counterpart with the same power.