DocumentCode
3609897
Title
Load Modulation Measurements of X-Band Outphasing Power Amplifiers
Author
Litchfield, Michael ; Reveyrand, Tibault ; Popovic, Zoya
Author_Institution
Dept. of Electr. Comput. & Energy Eng., Univ. of Colorado at Boulder, Boulder, CO, USA
Volume
63
Issue
12
fYear
2015
Firstpage
4119
Lastpage
4129
Abstract
This paper presents an in-depth investigation of both isolated and non-isolated outphasing power amplifiers, with and without supply modulation. X-band GaN MMIC power amplifiers with 70% power-added efficiency and 2.7 W output power at 10.1 GHz are configured in hybrid outphasing circuits with several combiners that include bi-directional couplers, enabling calibrated measurements of internal load modulation. It is experimentally demonstrated that the load modulation critically depends on the power balance of the two internal MMIC PAs. Despite the additional loss in the combiner, peak total efficiencies greater than 47% are achieved by full outphasing PAs with more than 3.7 W of output power. A comparison between several outphasing configurations quantifies the improvement in efficiency for both isolated and non-isolated outphasing PAs with supply modulation.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; microwave power amplifiers; waveguide couplers; wide band gap semiconductors; GaN; MMIC PA; X-band outphasing power amplifier; bidirectional coupler; efficiency 70 percent; frequency 10.1 GHz; load modulation measurement; power 2.7 W; power balance; power-added efficiency; MMICs; Modulation; Power amplifiers; Power generation; Power measurement; Radio frequency; Voltage measurement; GaN; LSNA; load modulation; outphasing; power amplifiers;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2015.2495127
Filename
7321838
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