Epitaxial growth of graphene thin film by pulsed laser deposition

Author

Jin Wang ; Zhengwei Xiong ; Jian Yu ; Hongbu Yin ; Xuemin Wang ; Liping Peng ; Yuying Wang ; Xinmin Wang ; Tao Jiang ; Linhong Cao ; Weidong Wu ; Chuanbin Wang ; Lianmeng Zhang

Author_Institution

State Key Lab. of Adv. Technol. for Mater. Synthesis & Process., Wuhan Univ. of Technol., Wuhan, China

Volume

10

Issue

11

fYear

2015

Firstpage

649

Lastpage

652

Abstract

Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp²-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.

Keywords

Raman spectra; X-ray photoelectron spectra; graphene; pulsed laser deposition; thin films; transmission electron microscopy; vapour phase epitaxial growth; C; HRTEM; Raman spectroscopy; X-ray photoelectron spectroscopy; XPS; carbon binding energy; depositing temperature; epitaxial growth; graphene thin film; high-resolution transmission electron microscopy; pulsed laser deposition; single oriented crystal domains; temperature 873 K;

fLanguage

English

Journal_Title

Micro Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

DOI

10.1049/mnl.2015.0047

Filename

7331759